Study of Doped Amorphous Silicon Thin Films
Author Information
Author(s): Sánchez Pascal, Lorenzo Olaya, Menéndez Armando, Menéndez Jose Luis, Gomez David, Pereiro Rosario, Fernández Beatriz
Primary Institution: University of Oviedo
Hypothesis
How do variations in gas flow rates affect the properties of doped amorphous silicon thin films?
Conclusion
The study found that variations in gas flow rates do not significantly affect the bandgap energy of the thin films, but they do influence the dopant concentration and conductivity.
Supporting Evidence
- The study used multiple techniques to analyze the thin films, ensuring comprehensive data collection.
- Significant differences in dopant concentrations were observed with varying gas flow rates.
- The study confirmed the homogeneous distribution of dopant elements throughout the layers.
Takeaway
This study looked at how changing the gas used to make thin films of silicon affects their properties. It found that while the energy needed to use the films doesn't change much, the amount of special ingredients in them does.
Methodology
The study used UV-NIR spectrophotometry, ellipsometry, and glow discharge optical emission spectrometry for analysis.
Limitations
The study did not provide information on the dopant elements concentration or their distribution throughout the coating.
Digital Object Identifier (DOI)
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